Micron's next-generation 3D NAND, which will enter mass production in 2H 2027, is set to offer three significant advantages: it will double storage density, increase I/O performance by 50% compared to the company's current-generation NAND memory, and decrease power consumption, the company revealed at an event this week. To achieve these aggressive goals, Micron plans to take a page from YMTC's book and adopt wafer-on-wafer bonding. Meanwhile, Micron is also developing new materials and denser memory cell architectures to extend 3D NAND scaling beyond G11.