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Micron details ambitious DRAM and NAND roadmap — 3D NAND, High-NA EUV, new materials, and custom silicon makes a…

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Last month, Micron disclosed its DRAM and NAND memory roadmaps for the next several years, revealing plans to use wafer bonding, new materials that enable making NAND cells smaller, High-NA EUV lithography, and detailing its moves toward 3D DRAM. Perhaps the most revealing part of Micron's story is that the company plans to expand its portfolio of custom DRAM and NAND products as AI developers increasingly require memory and storage solutions optimized for their unique processor architectures and specific workloads.

Micron

(Image credit: Micron)